STPSC806D datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STPSC806D

2/7

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.2 x IF(AV) + 0.113 x IF

(RMS)

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) RMS forward current

Continuous forward current

TC = 115 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

IFRM

Repetitive peak forward current

δ = 0.1, TC = 110 °C,

Tj = 150 °C

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Maximum Value

Unit

Rth(j-c)

Junction to case

2.4

°C/W

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

(1)

tp = 10 ms, δ < 2%

Reverse leakage

current

Tj = 25 °C

VR = VRRM

100

µA

Tj = 150 °C

150

1000

(2)

tp = 500 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 8 A

1.4

1.7

Tj = 150 °C

1.6

2.1

Table 5.

Other parameters

Symbol

Parameter

Test conditions

Typ

Unit

Total capacitive charge

Vr = 400 V, IF = 8 A dIF/dt = -200 A/µs

Tj = 150 °C

Total capacitance

Vr = 0 V, Tc = 25 °C, F = 1 Mhz

450

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