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ASM3P2853AF-08ST Folha de dados(PDF) 3 Page - PulseCore Semiconductor

Nome de Peças ASM3P2853AF-08ST
Descrição Electrónicos  Peak EMI Reducing Solution
PDF  8 Pages
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Fabricante Electrônico  PULSECORE [PulseCore Semiconductor]
Página de início  http://www.onsemi.com/
Logo PULSECORE - PulseCore Semiconductor

ASM3P2853AF-08ST Folha de dados(HTML) 3 Page - PulseCore Semiconductor

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Peak EMI Reducing Solution
3 of 8
November 2006
ASM3P2853A
rev 1.3
Notice: The information in this document is subject to change without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
-0.5 to +4.6
V
TSTG
Storage temperature
-65 to +125
°C
TA
Operating temperature
-40 to +85
°C
Ts
Max. Soldering Temperature (10 sec)
260
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage (As per JEDEC STD22- A114-B)
2
KV
Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect
device reliability.
Operating Conditions
Parameter
Symbol
Condition / Description
Min
Typ
Max
Unit
Supply Voltage
VDD
2.5V ± 5%
2.375
2.5
2.625
V
Ambient Operating
Temperature Range
TA
-40
-
+85
°C
Crystal Resonator Frequency
FXIN
25
MHz
Output Driver Load Capacitance
CL
-
-
15
pF
Crystal Specifications
Fundamental AT cut parallel resonant crystal
Nominal frequency
25MHz
Frequency tolerance
± 50ppm or better at 25°C
Operating temperature range
-25°C to +85°C
Storage temperature
-40°C to +85°C
Load capacitance
18pF
Shunt capacitance
7pF maximum
ESR
25
Ω



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