SN75469N datasheet(3/9 Pages) TI

3 / 9 page

SN75468, SN75469

DARLINGTON TRANSISTOR ARRAYS

SLRS023B – DECEMBER 1976 – REVISED SEPTEMBER 1995

3–3

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

electrical characteristics, TA = 25°C (unless otherwise noted)

PARAMETER

TEST

TEST CONDITIONS

SN75468

SN75469

UNIT

PARAMETER

TEST

FIGURE

TEST CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

IC = 125 mA

IC = 200 mA

2.4

VI( )

On state input voltage

VCE =2V

IC = 250 mA

2.7

VI(on)

On-state input voltage

VCE = 2 V

IC = 275 mA

IC = 300 mA

IC = 350 mA

C ll

itt

II = 250 µA,

IC = 100 mA

0.9

1.1

0.9

1.1

VCE(sat)

Collector-emitter

saturation voltage

II = 350 µA,

IC = 200 mA

1.3

()

saturation voltage

II = 500 µA,

IC = 350 mA

1.2

1.6

1.2

1.6

Clamp-diode forward

voltage

IF = 350 mA

1.7

VCE = 100 V,

II = 0

ICEX

Collector cutoff current

VCE = 100 V,

II = 0

100

µA

TA = 70°C

VI = 1 V

500

II( ff)

Off state input current

VCE = 50 V,

IC = 500 µA,

µA

II(off)

Off-state input current

TA = 70°C

µ ,

µA

VI = 3.85 V

0.93

1.35

Input current

VI = 5 V

0.35

0.5

VI = 12 V

1.45

Clamp-diode reverse

VR = 100 V

µA

current

VR = 100 V,

TA = 70°C

100

µA

Input capacitance

VI = 0,

f = 1 MHz

switching characteristics, TA = 25°C free-air temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tPLH

Propagation delay time, low-to-high-level output

VS = 50 V,

RL = 163 Ω,

CL = 15 pF,

0.25

µs

tPHL

Propagation delay time, high-to-low-level output

See Figure 9

0.25

µs

VOH

High-level output voltage after switching

VS = 50 V,

IO ≈ 300 mA, See Figure 10

VS –20

SN75469N Folha de dados(PDF) 3 Page - Texas Instruments

SN75469N Folha de dados(HTML) 3 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9

Folha de dados Download

Ligação URL