Dated : 18/01/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
LS-34
QuadroMELF
Dimensions in mm
LSDB3, LSDB4
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover current
at breakover voltage as they withstand peak pulse current.
The breakover symmetry is within four volts with a typical
breakover voltage of LSDB3 32 V, LSDB4 40 V. These diacs
are intended for use in thyristor phase control, circuits for
lamp-dimming, universal-motor speed controls, and heat
controls.
Storage Temperature Range TS - 40 OC to +150 OC
Operating Temperature Range TJ - 40OC to +100 OC
MAXIMUM RATINGS at 50 OC Ambient
Peak Current (10 µs duration, 120 cycle repetition rate) IP ± 2 A Max.
Peak output voltage eP 3 ± Volts Max.
1)
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
LSDB3
28
36
Breakover Voltage
LSDB4
V(BR)1 and V(BR)2
35
45
V
Breakover Currents
I(BR)1 and I(BR)2
-
200
µA
Breakover Voltage Symmetry
[V(BR)1]-[V(BR)2]
-
3.8
V
Dynamic Breakover Voltage
ΔI = [IBR to IF = 10 mA]
|
ΔV ± |
5
-
V
Thermal Impedance Junction to Ambient Air
RθJA
-
60
O
C/W
60~
120 V
ep
DIAC
0.1 uF
CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST
20
1)
3.3 K
120 VAC
60 Hz
load up to 1500 W
200 K
0.1 uF
100 V
TRIAC
BILATERAL
TRIGGER
DIAC
TYPICAL DIAC-TRIAC FULL-WAVE PHASE
CONTROL CIRCUIT
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