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Dated : 11/04/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMDTA115W
PNP Silicon Epitaxial Planar Digital Transistor
Resistance Values
Type
R1 (KΩ)
R2 (KΩ)
MMDTA115W
100
100
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
VEBO
- 40 to + 10
V
Collector Current
-IC
100
mA
Total Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 5 mA
hFE
82
-
-
-
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
-
500
nA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
0.15
mA
Collector Emitter Saturation Voltage
at -IC = 5 mA, -IB = 0.25 mA
-VCEsat
-
-
0.3
V
Input Off Voltage
at -VCE = 5 V, -IC = 100 µA
-VI(off)
0.5
-
-
V
Input On Voltage
at -VCE = 0.3 V, -IC = 1 mA
-VI(on)
-
-
3
V
Transition Frequency
at -VCE = 10 V, IE = 5 mA, f = 100 MHz
fT
-
250
-
MHz
Input Resistance
R1
70
100
130
KΩ
Resistance Ratio
R2/R1
0.8
1
1.2
-
Base
(Input)
Emitter
(Common)
R2
R1
Collector
(Output)
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