RJK0393DPA-00-J53 datasheet(4/7 Pages) RENESAS

Nome de Peças	RJK0393DPA-00-J53

Descrição Electrónicos	Silicon N Channel Power MOS FET Power Switching

PDF	7 Pages

Scroll/Zoom	100%

Fabricante Electrônico	RENESAS [Renesas Technology Corp]

Página de início	http://www.renesas.com

Logo

4 / 7 page

RJK0393DPA

REJ03G1784-0200 Rev.2.00 Apr 03, 2009

Page 4 of 6

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

–25

150

100 125

VGS = 4.5 V

10 V

ID = 5 A, 10 A, 20 A

5 A, 10 A, 20 A

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

102030

10000

3000

1000

300

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

ID = 40 A

VGS

VDS

VDD = 25 V

10 V

VDD = 25 V

10 V

Gate Charge Qg (nc)

Dynamic Input Characteristics

Source to Drain Voltage VSD (V)

0.4

0.8

1.2

1.6

2.0

Reverse Drain Current vs.

Source to Drain Voltage

5 V

10 V

100

125

150

Channel Temperature Tch (°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

Pulse Test

IAP = 16 A

VDD = 15 V

duty < 0.1%

≥ 50 Ω

VGS = 0, –5 V

RJK0393DPA-00-J53 Folha de dados(PDF) 4 Page - Renesas Technology Corp

RJK0393DPA-00-J53 Folha de dados(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7

Folha de dados Download

Ligação URL