BAV19-TAP datasheet(2/5 Pages) VISHAY

2 / 5 page

www.vishay.com

Document Number 85543

Rev. 1.7, 19-Feb-07

BAV17/18/19/20/21

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

l = 4 mm, TL = constant

RthJA

300

K/W

Junction temperature

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

1000

Reverse current

VR = 20 V

BAV17

100

VR = 50 V

BAV18

100

VR = 100 V

BAV19

100

VR = 150 V

BAV20

100

VR = 200 V

BAV21

100

Tj = 100 °C, VR = 20 V

BAV17

µA

Tj = 100 °C, VR = 50 V

BAV18

µA

Tj = 100 °C, VR = 100V

BAV19

µA

Tj = 100 °C, VR = 150 V

BAV20

µA

Tj = 100 °C, VR = 200 V

BAV21

µA

Breakdown voltage

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

BAV17

V(BR)

BAV18

V(BR)

BAV19

V(BR)

120

BAV20

V(BR)

200

BAV21

V(BR)

250

Diode capacitance

VR = 0, f = 1 MHz

1.5

Differential forward resistance

IF = 10 mA

Reverse recovery time

IF = IR = 30 mA,

iR = 3 mA,

RL = 100 Ω

trr

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