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2SD1435 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1435 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1435 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1mA, RBE=∞ 100 V V(BR)EBO Emitter-base breakdown voltage IE=50mA, IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=8A ,IB=16mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=8A ,IB=16mA 2.5 V VBEsat-2 Base-emitter saturation voltage IC=15A ,IB=150mA 3.5 V ICBO Collector cut-off current VCB=100V, IE=0 100 μA ICEO Collector cut-off current VCE=80V, RBE=∞ 1.0 μA hFE DC current gain IC=8A ; VCE=3V 1000 20000 Switching times ton Turn-on time 2.0 μs toff Turn-off time IC = 8 A,IB1 =-IB2 =16mA 8.0 μs |
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