| Os motores de busca de Datasheet de Componentes eletrônicos |
|
2SC5130 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC5130 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5130 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 0.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 10 μA hFE DC current gain IC=1.5A ; VCE=4V 10 30 COB Output capacitance IE=0; VCB=10V;f=1MHz 30 pF fT Transition frequency IC=-0.3A ; VCE=12V 20 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.0 μs tf Fall time IC=1.5A; IB1=0.15A IB2=-0.3A VCC=200V ,RL=133Ω 0.3 μs |
|
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |