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2SC3540 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3540 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3540 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.15A 0.2 0.4 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.15A 0.9 1.2 V ICBO Collector cut-off current VCB=100V; IE=0 1 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 240 hFE-2 DC current gain IC=3A ; VCE=1V 40 fT Trainsition frequency IC=1A ; VCE=4V 120 MHz Cob Collector output capacitance IE=0 ; VCE=10V;f=1MHz 80 pF Switching times ton Turn-on time 0.2 μs tstg Storage time 1.0 μs tf Fall time IB1=-IB2=0.15A VCC≈30V;RL=10Ω 0.1 μs hFE-1 Classifications O Y 70-140 120-240 |
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