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STM8601 Folha de dados(PDF) 3 Page - SamHop Microelectronics Corp.

Nome de Peças STM8601
Descrição Electrónicos  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8601 Folha de dados(HTML) 3 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-60
V
-1
IGSS
±100
nA
VGS(th)
-1.0
V
85
gFS
S
VSD
CISS
730
pF
COSS
68
pF
CRSS
43
pF
Qg
12.4
nC
10.5
nC
Qgs
65
nC
Qgd
23
tD(ON)
14
ns
tr
1.5
ns
tD(OFF)
3.3
ns
tf
ns
Gate-Drain Charge
VDS=-30V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-30V
ID=-1A
VGS=-10V
RGEN=3.3 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-30V,ID=-3.3A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-3.3A
VDS=-5V , ID=-3.3A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-250uA
VDS=-48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
P-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
-3.0
VGS=-4.5V , ID=-2.8A
105
110
150
m ohm
c
f=1.0MHz
c
VDS=-30V,ID=-3.3A,
VGS=-30V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=-2A
-0.81
-1.2
V
Notes
_
_
STM8601
www.samhop.com.tw
Nov,06,2008
3
nC
VDS=-30V,ID=-3.3A,VGS=-4.5V
6.7
_
-1.8
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=20V,VGS=10V.(See Figure13)
IS
Maximum Continuous Drain-Source Diode Forward Current
-2
A
7
Ver 1.0



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