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TZM5259B Folha de dados(PDF) 1 Page - Vishay Siliconix |
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TZM5259B Folha de dados(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() TZM5221B...TZM5267B Vishay Telefunken Rev. 2, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85609 Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Electrical data identical with the devices 1N5221B...1N5267B D Low reverse current level D VZ–tolerance ± 5% Applications Voltage stabilization 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation RthJA<300K/W, Tamb=25°C PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.1 V |
Nº de peça semelhante - TZM5259B |
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Descrição semelhante - TZM5259B |
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