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BUW133H Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BUW133H
Descrição Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW133H Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUW133H Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUW133H Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUW133H
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage
(VBE= 0)
850
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current
10
A
IBM
Base Current-Peak
15
A
PC
Collector Power Dissipation
@TC=25℃
135
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.93
℃/W
isc Website：www.iscsemi.cn


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