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BDT29CF Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças BDT29CF
Descrição Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT29CF Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

  BDT29CF Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDT29CF Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDT29F/AF/BF/CF/DF
DESCRIPTION
·DC Current Gain -hFE = 40(Min)@ IC= 0.4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF
80V(Min)- BDT29BF; 100V(Min)- BDT29CF
120V(Min)- BDT29DF
·Complement to Type BDT30F/AF/BF/CF/DF
APPLICATIONS
·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT29F
80
BDT29AF
100
BDT29BF
120
BDT29CF
140
VCBO
Collector-Base
Voltage
BDT29DF
160
V
BDT29F
40
BDT29AF
60
BDT29BF
80
BDT29CF
100
VCEO
Collector-Emitter
Voltage
BDT29DF
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
3
A
IB
B
Base Current
0.4
A
PC
Collector Power Dissipation
TC=25℃
19
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
9.17
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
55
℃/W
isc Website：www.iscsemi.cn


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