BUW133 datasheet(2/2 Pages) ISC

Nome de Peças	BUW133

Descrição Electrónicos	isc Silicon NPN Power Transistors

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUW133/A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BUW133

450

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BUW133A

IC= 0.1A ; IB= 0; L= 10mH

500

BUW133

IC= 5A; IB= 0.7A

2.5

VCE(sat)-1

Collector-Emitter

Saturation Voltage

BUW133A

IC= 5A; IB= 1A

1.0

BUW133

IC= 10A; IB= 1.3A

3.0

VCE(sat)-2

Collector-Emitter

Saturation Voltage

BUW133A

IC= 10A; IB= 2A

1.5

BUW133

IC= 10A; IB= 1.3A

1.5

VBE(sat)

Base-Emitter

Saturation Voltage

BUW133A

IC= 10A; IB= 2A

1.5

ICEV

Collector Cutoff Current

VCE=VCESMmax;VBE=-1.5V

VCE=VCESMmax;VBE=-1.5V;TJ=100℃

0.25

1.5

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 15A ; VCE= 5V

COB

Output Capacitance

IE= 0 ; VCB= 10V; ftest= 1kHz

400

Switching Times , Resistive Load

ton

Turn-On Time

0.4

μs

tstg

Storage Time

1.3

μs

Fall Time

IC= 10A ;IB1= 1.3A;IB2= -2.6A

0.15

μs

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