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MJE5182 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças MJE5182
Descrição Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE5182 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
MJE5180/5181/5182
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)- MJE5180
= 140V(Min)- MJE5181
= 160V(Min)- MJE5182
·Low Saturation Voltage
·Complement to Type MJE5170/5171/5172
APPLICATIONS
·Designed for use in general purpose amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
MJE5180
120
MJE5181
140
VCBO
Collector-Base
Voltage
MJE5182
160
V
MJE5180
120
MJE5181
140
VCEO
Collector-Emitter
Voltage
MJE5182
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@ TC=25℃
65
PC
Collector Power Dissipation
@ Ta=25℃
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.92
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃/W
isc Website：www.iscsemi.cn


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