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2SC3552 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3552 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 12 A ICM Collector Current-Peak 30 A IB B Base Current- Continuous 6 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
Nº de peça semelhante - 2SC3552 |
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Descrição semelhante - 2SC3552 |
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