BU406 datasheet(2/3 Pages) ISC

Nome de Peças	BU406

Descrição Electrónicos	isc Silicon NPN Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

Logo

2 / 3 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU406

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ;IB= 0

200

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

1.2

ICES

Collector Cutoff Current

VCE= 400V; VBE= 0

VCE=250V; VBE= 0

VCE=250V; VBE= 0;TC= 150℃

5.0

0.1

1.0

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

1.0

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V, ftest= 20MHz

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

Fall Time

IC= 5A; IB1= -IB2= 0.5A, L= 150μH

VCC= 40V

0.75

μs

isc Website：www.iscsemi.cn

BU406 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

BU406 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

Folha de dados Download

Ligação URL