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2N3055A Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N3055A Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEV Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
Nº de peça semelhante - 2N3055A |
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Descrição semelhante - 2N3055A |
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