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2SC4177 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SC4177
Descrição Electrónicos  NPN Silicon Epitaxia
PDF  1 Pages
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4177 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC4177 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
1 Emitter
2 Base
3 Collector
NPN Silicon Epitaxia
2SC4177
Features
High dc current gain
High voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5V
Collector current
IC
100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 60V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB =5V, IC =0
0.1
ìA
DC current gain *
hFE
VCE =6V , IC = 1.0mA
90
200
600
Collector-emitter saturation voltage *
VCE(sat) IC = 100mA, IB = 10mA
0.15
0.3
V
Base-emitter saturation voltage *
VBE(sat) IC = 100mA, IB = 10mA
0.86
1.0
V
Base emitter voltage *
VBE
VCE =6V, IC = 1.0mA
0.55
0.62
0.65
V
Gain bandwidth product
fT
VCE =6V, IE = -10mA
250
MHz
Output capacitance
Cob
VCE =6V, IE = 0, f = 1MHz
3.0
pF
*. PW
350ìs,duty cycle
2%
hFE Classification
Marking
L4
L5
L6
L7
hFE
90
180
135 270
200 400
300 600


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