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2SD1005 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SD1005
Descrição Electrónicos  NPN Silicon Epitaxia
PDF  1 Pages
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1005 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1005 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
NPN Silicon Epitaxia
2SD1005
Features
World standard miniature package: SOT-89.
High collector to base voltage: VCBO
100V.
Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5V
Collector current
IC
1A
Collector current (pulse) *
IC
1.5
A
Total power dissipation
at 25
ambient temperature *
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
*1. PW
10ìs,duty cycle
50%
*2. Whenmountedonceramic substrateof 16cm
2 X0.7mm
PT
2W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 100V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB =5V, IC=0
100
nA
VCE =2V , IC = 100mA
90
200
400
VCE =2V , IC = 500mA
25
80
Collector-emitter saturation voltage *
VCE(sat) IC = 500mA , IB = 50mA
0.15
0.5
V
Base-emitter saturation voltage *
VBE(sat) IC = 500mA , IB = 50mA
0.9
1.5
V
Base-emitter voltage *
VBE
VCE =10V , IC = 10mA
600
630
700
mV
Gain bandwidth product
fT
VCE =5V , IE = -10mA
160
MHz
Output capacitance
Cob
VCB = 10V , IE = 0 , f = 1.0MHz
12
pF
*. PW
350ìs,duty cycle
2%
DC current gain *
hFE
hFE Classification
Marking
BW
BV
BU
hFE
90
180
135
270
200
400


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