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SWBF07 Folha de dados(PDF) 4 Page - Seoul Semiconductor |
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SWBF07 Folha de dados(HTML) 4 Page - Seoul Semiconductor |
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4 / 15 page ![]() Rev. 1.00 SWBF07 3. Absolute Maximum Ratings ( Ta = 25°C) Parameter Symbol Value Unit Power Dissipation Pd*1 120 mW Forward Current IF 30 mA Peak Forward Current IFM*2 100 mA Reverse Voltage VR 5 V Operating Temperature Topr -30 ~ +85 °C Storage Temperature Tstg -40 ~ +100 °C Junction Temperature Tj 125 °C *1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product. *2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10 4. Electro-Optical Characteristics ( Ta = 25°C) Item Symbol Condition Min Typ Max Unit Rank Y 2.7 - 3.0 Rank Z 3.0 - 3.3 Forward Voltage* Rank A VF IF = 20 mA 3.3 - 3.7 V Reverse Current IR VR = 5 V - - 50 µA Rank J5 1500 - 1600 Rank J6 1600 - 1700 Rank J7 1700 - 1800 Rank J8 1800 - 1900 Rank J9 1900 - 2000 Rank K0 2000 - 2100 Luminous Intensity*1 Rank K1 IV IF = 20 mA 2100 - 2200 mcd Viewing Angle *2 2 θ1/2 IF = 20 mA 120 ˚ x 0.264 - 0.296 Rank b y 0.248 - 0.295 x 0.287 - 0.311 Rank e y 0.276 - 0.315 x 0.307 - 0.330 Color Coordinates *3 Rank f y IF = 20 mA 0.294 - 0.339 - *1 luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. *3 Measurement Uncertainty of the Color Coordinates is ±0.01 * Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul Semiconductor. SEOUL SEMICONDUCTOR CO., LTD. 3 SSC-QP-7-03-44(갑) |
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