BAS32L_6

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 06 — 29 October 2008

2 of 10

NXP Semiconductors

BAS32L

High-speed switching diode

2.

Pinning information

[1]

The marking band indicates the cathode.

3.

Ordering information

4.

Marking

[1]

black: made in Philippines

brown: made in China

5.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

cathode

[1]

2

anode

ka

006aab040

2

1

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BAS32L

-

hermetically sealed glass surface-mounted package;

2 connectors

SOD80C

Table 4.

Marking codes

Type number

Marking code[1]

BAS32L

marking band

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse

voltage

-

100

V

reverse voltage

-

75

V

forward current

[1] -

200

mA

repetitive peak forward

current

-

450

mA

non-repetitive peak forward

current

square wave

[2]

4

A

-

1

A

-

0.5

A

total power dissipation

[1] -

500

mW