TYN1016RG datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

TN16 and TYNx16 Series

4/7

Fig. 1: Maximum average power dissipation

versus average on-state current.

Fig. 2-1: Average and D.C. on-state current

versus case temperature.

Fig. 2-2: Average and D.C. on-state current

versus ambient temperature (copper surface

under tab: S = 1 cm² (for D²PAK).

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature.

Fig. 5: Surge peak on-state current versus

number of cycles.

2468

P(W)

α = 180°

IT(av)(A)

360°

100

125

IT(av)(A)

D.C.

α =180°

Tcase(°C)

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

IT(av)(A)

D.C.

α = 180°

Tamb(°C)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

K = [Zth/Rth]

Zth(j-c)

Zth(j-a)

tp(s)

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT,IH,IL [Tj] / IGR,IH,IL [Tj = 25 °C]

IGT

IH & IL

Tj(°C)

100

1000

100

120

140

160

180

200

ITSM(A)

Non repetitiv e

Tj initial = 25 °C

Repetitive

Tcase = 110 °C

Number of cycles

One cycle

tp = 10ms

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