GSIB420 thru GSIB480

Vishay General Semiconductor

Document Number: 88647

Revision: 31-Jan-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

0.3

1.1

1.3

0.01

10

0.1

1

100

0.5

0.7

0.9

Instantaneous Forward Voltage (V)

T

T

T

1000

20

60

40

100

80

0.01

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

0.1

10

1

100

1000

10

1

100

Reverse Voltage (V)

0.1

0.01

10

1

100

100

10

1

0.1

t - Heating Time (s)

+

0.996 (25.3)

0.972 (24.7)

0.709 (18.0)

0.669 (17.0)

0.602 (15.3)

0.579 (14.7)

0.118 x 45° Chamfer

0.492

(12.5)

0.042 (1.07)

0.038 (0.96)

DIA.

0.157 (4.0)

0.078 (1.98)

0.062 (1.58)

0.057 (1.45)

0.041 (1.05)

0.189 (4.8)

0.173 (4.4)

0.709 (18.0)

0.669 (17.0)

0.146 (3.7)

0.130 (3.3)

0.150 (3.8)

0.134 (3.4)

0.134 (3.4)

0.122 (3.1)

DIA.

0.126 (3.2)

0.110 (2.8)

0.059

(1.50)

0.012

(0.30)

Z

Detail Z

Enlarged

0.382 (9.7)

0.366 (9.3)

0.303 (7.7)

0.287 (7.3)

(3 x)

Case Style GSIB-3G