IRLL014 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91319

S-81392-Rev. A, 07-Jul-08

IRLL014, SiHLL014

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

(PCB Mount)a

RthJA

°C/W

Maximum Junction-to-Case (Drain)

RthJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

0.073

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.0

Gate-Source Leakage

IGSS

VGS = ± 10 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 48 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 5.0 V

ID = 1.6 Ab

0.20

VGS = 4.0 V

ID = 1.4 Ab

0.28

Forward Transconductance

gfs

VDS = 25 V, ID = 1.6 A

3.2

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

400

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

-42

Total Gate Charge

VGS = 5.0 V

ID = 10 A, VDS = 48 V,

see fig. 6 and 13b

8.4

Gate-Source Charge

Qgs

3.5

Gate-Drain Charge

Qgd

6.0

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 10 A,

RG = 12 Ω, RD = 2.8 Ω, see fig. 10b

-9.3

Rise Time

110

Turn-Off Delay Time

td(off)

-17

Fall Time

-26

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

2.7

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µsb

130

Body Diode Reverse Recovery Charge

Qrr

0.33

0.65

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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