STZT2222 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

hfe

∗∗

Small Signal Current

Gain

IC = 1 mA

VCE = 10 V

f = 1 KHz

IC = 10 mA

VCE = 10 V

f = 1 KHz

300

375

Ω

hie

∗∗

Input Impedance

IC = 1 mA

VCE = 10 V

f = 1 KHz

IC = 10 mA

VCE = 10 V

f = 1 KHz

0.25

1.25

hre

∗∗

Reverse Voltage Ratio

IC = 1 mA

VCE = 10 V

f = 1 KHz

IC = 10 mA

VCE = 10 V

f = 1 KHz

-4

hoe

∗∗

Output Impedance

IC = 1 mA

VCE = 10 V

f = 1 KHz

IC = 10 mA

VCE = 10 V

f = 1 KHz

375

Transition Frequency

IC = 10 mA VCE = 10 V f = 100 MHz

for STZT2222

for STZT2222A

250

300

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = 0.5 V

f = 1 MHz

for STZT2222

for STZT2222A

Noise Figure

f = 1 KHz

∆F = 200 Hz RG = 1KΩ

IC = 0.1 mA

VCE = 10 V

4dB

Delay Time

IC = 150 mA

IC1 = 15 mA

VBE = -0.5 V

Rise Time

Storage Time

IC = 150 mA

IC1 = 15 mA

IB2 = 15 mA

225

Fall Time

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

∗∗ Only for STZT2222A

STZT2222/STZT2222A

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