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Document Number: 71397

S-71241–Rev. E, 25-Jun-07

Vishay Siliconix

DG411L/412L/413L

TEST CIRCUITS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Figure 4. Charge Injection

10 nF

D

V+

S

V-

3 V

IN

GND

OFF

ON

OFF

OFF

ON

OFF

Q =

by sense of switch.

V-

V+

Figure 5. Crosstalk

0 V, 2.4 V

C = RF bypass

0 V, 2.4 V

50

Ω

V+

GND

V -

NC

C

CC

V+

V-

Figure 6. Off-Isolation

50

Ω

D

0 V, 2.4 V

V+

GND

V-

C

Off Isolation = 20 log

IN

C

S

C

C = RF Bypass

V-

V+

Figure 7. Source/Drain Capacitances

D

IN

S

V+

GND

V -

C

0 V, 2.4 V

Meter

HP4192A

Impedance

Analyzer

or Equivalent

CC

V-