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STW55NE10 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STW55NE10
Descrição Electrónicos  N - CHANNEL 100V - 0.021ohm - 55A - TO247 STripFET POWER MOSFET
PDF  8 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW55NE10 Folha de dados(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =50 V
ID =25 A
RG =4.7
Ω
VGS =10 V
(see t est circuit, f igure 3)
25
100
34
135
ns
ns
Qg
Q gs
Qgd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =80 V
ID =50 A
VGS = 10 V
123
24
47
165
32
64
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise T ime
Fall T ime
Cross-over Time
VDD =80 V
ID =55 A
RG =4.7
Ω VGS =10 V
(see t est circuit, f igure 5)
45
35
65
60
47
88
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
55
220
A
A
VSD (
∗)Forward On Voltage
ISD =55 A
VGS =0
1. 5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 55 A
di/ dt = 100 A/
µs
VDD =30 V
Tj = 150
oC
(see t est circuit, f igure 5)
155
815
10.5
210
1100
15
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STW55NE10
3/8



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