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STW33N20 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STW33N20
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  9 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW33N20 Folha de dados(HTML) 1 Page - STMicroelectronics

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STW33N20
N - CHANNEL ENHANCEMENT MODE
POWER MOSFET
s
TYPICAL RDS(on) = 0.073
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
150
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC CONVERTERS & DC-AC INVERTERS
s
TELECOMMUNICATION POWER SUPPLIES
s
INDUSTRIAL MOTOR DRIVES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VDS
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
200
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at Tc =25
oC33
A
ID
Drain Current (cont inuous) at Tc =100
oC20
A
IDM(
•)
Drain Current (pulsed)
132
A
Ptot
Tot al Dissipation at Tc =25
oC
180
W
Derating Fact or
1. 44
W/
oC
Tstg
St orage Temperature
-65 to 150
oC
Tj
Max. Operat ing Junction Temperat ure
150
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
ST W33N20
200 V
< 0.085
Ω
33 A
October 1997
1
2
3
TO-247
1/9


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