W11NB80 datasheet(1/8 Pages) STMICROELECTRONICS

Nome de Peças	W11NB80

Descrição Electrónicos	N-CHANNEL 800V - 0.65ohm - 11A - T0-247 PowerMESH MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

1 / 8 page

STW11NB80

N-CHANNEL 800V - 0.65

Ω - 11A - T0-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.65

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC11

A

ID

Drain Current (continuous) at Tc =100

oC6.9

A

IDM (

•)

Drain Current (pulsed)

44

A

Ptot

T otal Dissipation at Tc =25

oC190

W

Derating Factor

1.52

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

I SD

≤ 11A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STW 11NB80

800 V

< 0.8

Ω

11 A

July 1999

1

2

3

TO-247

1/8

Nº de peça semelhante - W11NB80

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	W11NK100Z	312Kb / 14P	N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH??PowerMOSFET 31-Jul-2006

More results

Descrição semelhante - W11NB80

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STU10NB80	44Kb / 5P	N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET Apr-1999
	STU9NB80	82Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW12NK80Z	299Kb / 9P	N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?줡ower MOSFET Oct-2002
	STW15NB50	110Kb / 9P	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET Jun-1998
	STW7NB80	88Kb / 8P	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET Dec-1999
	STW7NC80Z	248Kb / 8P	N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH™ III MOSFET Jul-2000
	STW8NB80	50Kb / 5P	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET Jan-1999
	STW9NB80	86Kb / 8P	N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET Jul-1999
	STW9NC80Z	248Kb / 8P	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™ II MOSFET Sep-2002
MagnaChip Semiconductor...	MMF80R650PB	1Mb / 10P	800V 0.65ohm N-channel MOSFET

More results

W11NB80 Folha de dados(PDF) 1 Page - STMicroelectronics

W11NB80 Folha de dados(HTML) 1 Page - STMicroelectronics

Nº de peça semelhante - W11NB80

Descrição semelhante - W11NB80

Html Pages

1 2 3 4 5 6 7 8

Folha de dados Download

Ligação URL