H7N1002AB datasheet(1/10 Pages) RENESAS

Nome de Peças	H7N1002AB

Descrição Electrónicos	Silicon N Channel MOS FET High Speed Power Switching

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

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Rev.2.00, Oct.30.2003, page 1 of 9

H7N1002AB

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0130-0200Z

Rev.2.00

Oct.30.2003

Features

• Low on-resistance

RDS(on) = 8 m

Ω typ.

• Low drive current

• Available for 4.5 V gate drive

Outline

TO-220AB

1

2

3

1. Gate

2. Drain

(Flange)

3. Source

D

G

S

Nº de peça semelhante - H7N1002AB

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Renesas Technology Corp	H7N1002LD	110Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD	138Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD-E	110Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD-E	138Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD	138Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching

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