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BB503C Folha de dados(PDF) 7 Page - Renesas Technology Corp

Nome de Peças BB503C
Descrição Electrónicos  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB503C Folha de dados(HTML) 7 Page - Renesas Technology Corp

Back Button BB503C Datasheet HTML 3Page - Renesas Technology Corp BB503C Datasheet HTML 4Page - Renesas Technology Corp BB503C Datasheet HTML 5Page - Renesas Technology Corp BB503C Datasheet HTML 6Page - Renesas Technology Corp BB503C Datasheet HTML 7Page - Renesas Technology Corp BB503C Datasheet HTML 8Page - Renesas Technology Corp BB503C Datasheet HTML 9Page - Renesas Technology Corp BB503C Datasheet HTML 10Page - Renesas Technology Corp BB503C Datasheet HTML 11Page - Renesas Technology Corp  
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BB503C
Rev.5.00 Aug 10, 2005 page 7 of 10
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10
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5
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VDS = 5 V
RG = 47 kΩ
f = 900 MHz
1
23
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5
4
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VDS = 5 V
RG = 47 kΩ
f = 900 MHz
VDS = 5 V
RG = 47 kΩ
f = 1 MHz
VDS = VG1 = 5 V
VG2S = 4 V
Gate Resistance RG (kΩ)
Power Gain vs.
Gate2 to Source Voltage
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate Resistance
Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
Noise Figure vs.
Gate2 to Source Voltage
4
0
10
20
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50
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2
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VDS = VG1 = 5 V
VG2S = 4 V
RG = 47 kΩ
Gain Reduction vs.
Gate2 to Source Voltage
Gate2 to Source Voltage VG2S (V)



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