Rev.2.00

Aug 07, 2006

page 1 of 6

FS10AS-3

High-Speed Switching Use

Nch Power MOS FET

REJ03G1407-0200

(Previous: MEJ02G0111-0101)

Rev.2.00

Aug 07, 2006

Features

• Drive voltage : 10 V

• V

• r

Ω

• I

• Integrated Fast Recovery Diode (TYP.) : 100 ns

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name: MP-3A)

1. Gate

2. Drain

3. Source

4. Drain

1

1

3

3

2, 4

2

4

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

150

V

Gate-source voltage

±20

V

Drain current

10

A

Drain current (Pulsed)

40

A

Avalanche drain current (Pulsed)

10

A

L = 100

µH

Source current

10

A

Source current (Pulsed)

40

A

Maximum power dissipation

35

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Mass

—

0.32

g

Typical value