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STTH102 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STTH102
Descrição Electrónicos  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  7 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH102 Folha de dados(HTML) 1 Page - STMicroelectronics

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November 2006
Rev 5
1/7
7
STTH102
High efficiency ultrafast diode
Main product characteristics
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH102, which is using ST’s new 200 V
planar technology, is specially suited for switching
mode base drive and transistor circuits. The
device is also intended for use as a free wheeling
diode in power supplies and other power
switching applications.
Order codes
IF(AV)
1 A
VRRM
200 V
Tj (max)
175° C
VF(max)
0.78 V
trr (max)
20 ns
Part Number
Marking
STTH102A
U12
STTH102
STTH102
STTH102RL
STTH102
K
A
K
A
SMA
(JEDEC DO-214AC)
STTH102A
DO-41
STTH102
Table 1.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(AV)
Average forward current
SMA
TL = 148° C δ = 0.5
1A
DO-41
TL = 130° C δ = 0.5
IFSM
Surge non repetitive forward
current
SMA
tp = 10 ms Sinusoidal
40
A
DO-41
50
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
www.st.com


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