STS7NF30L datasheet(2/5 Pages) STMICROELECTRONICS

Nome de Peças	STS7NF30L

Descrição Electrónicos	N - CHANNEL 30V - 0.021ohm - 7A SO-8 STripFET POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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THERMAL DATA

Rthj-amb

Tstg

(*)Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

150

-55 to 150

oC/W

(*) Mounted on FR-4 board ( (t

≤ 10sec)

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc = 125

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 20 V

± 100

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS = VGS ID = 250

µA

1.6

2.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 3.5 A

VGS = 4.5 V

ID = 3.5 A

0.021

0.025

0.032

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max

VGS = 10 V

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID = 3.5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0 V

1250

230

STS7NF30L

2/5

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