STS2NF100 datasheet(1/8 Pages) STMICROELECTRONICS

Nome de Peças	STS2NF100

Descrição Electrónicos	N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET™ II POWER MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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October 2002

.

STS2NF100

N-CHANNEL 100V - 0.23

Ω - 6A SO-8

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.23 Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100 % AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

STS2NF100

100 V

<0.26

Ω

6 A

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

(

••) Pulse width limited by safe operating area.

(

•) Current limited by the package

(1) ISD ≤2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 3A, VDD = 50V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID(•)

Drain Current (continuous) at TC = 25°C

2A

ID

Drain Current (continuous) at TC = 100°C

1.3

A

IDM(••)

Drain Current (pulsed)

8

A

Ptot

Total Dissipation at TC = 25°C

2.5

W

Derating Factor

0.016

W/°C

dV/dt (1)

Peak Diode Recovery voltage slope

40

V/ns

EAS (2)

Single Pulse Avalanche Energy

200

mJ

Tstg

Storage Temperature

-65 to 175

°C

Tj

Max. Operating Junction Temperature

Nº de peça semelhante - STS2NF100

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VBsemi Electronics Co.,...	STS2NF100	469Kb / 9P	N-Channel 100 V (D-S) MOSFET

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STS2NF100 Folha de dados(HTML) 1 Page - STMicroelectronics

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