2DPFS20V datasheet(1/8 Pages) STMICROELECTRONICS

Nome de Peças	2DPFS20V

Descrição Electrónicos	P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE

PDF	8 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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November 2002

.

STS2DPFS20V

P-CHANNEL 20V - 0.14

Ω - 2.5A SO-8

2.7V-DRIVE STripFET™ II MOSFET PLUS SCHOTTKY DIODE

DESCRIPTION

This product associates the latest low voltage

StripFETœ in p-channel version to a low drop

Schottky diode. Such configuration is extremely

versatile in implementing, a large variety of DC-DC

converters for printers, portable equipment, and

cellular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

MAIN PRODUCT CHARACTERISTICS

MOSFET

VDSS

RDS(on)

ID

20 V

< 0.20

Ω (@4.5V)

< 0.25

Ω (@2.7V)

2.5 A

SCHOTTKY

IF(AV)

VRRM

VF(MAX)

3 A

30 V

0.51 V

Symbol

Parameter

Value

Unit

VDS

Dain-source Voltage (VGS = 0)

20

V

VDGR

Drain-gate Voltage (RGS = 20 kW)

20

V

VGS

Gate- source Voltage

± 12

V

ID

Drain Current (continuous) at TC = 25°C

2.5

A

ID

Drain Current (continuous) at TC = 100°C

1.58

A

IDM(•)

Drain Current (pulsed)

10

A

Ptot

Total Dissipation at TC = 25°C

2W

Symbol

Parameter

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

30

V

IF(RMS)

RMS Forward Curren

20

A

IF(AV)

Average Forward Current

TL=125 oC

δ =0.5

3A

IFSM

Surge Non Repetitive Forward Current

tp= 10 ms

Sinusoidal

75

A

IRSM

Non Repetitive Peak Reverse Current

tp=100

µs1

A

dv/dt

Critical Rate Of Rise Of Reverse Voltage

10000

V/

µs

SO-8

INTERNAL SCHEMATIC DIAGRAM

(

•) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

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