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STB15NK50Z Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STB15NK50Z
Descrição Electrónicos  N-channel 500V - 0.30Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET
PDF  19 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STB15NK50Z Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical ratings STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z
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Rthj-a
Thermal resistance junction-ambient
max
62.5
50
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C
1.
When mounted on minimum foot-print
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
14
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=IAR, VDD=50V)
300
mJ
Table 4.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage
Igs=±1mA
(Open Drain)
30
V
Table 2.
Thermal data



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