2STR2215 datasheet(4/10 Pages) STMICROELECTRONICS

Nome de Peças	2STR2215

Descrição Electrónicos	Low voltage fast-switching PNP power transistor

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Electrical characteristics

2STR2215

4/10

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -15 V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -4 V

-0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = -100 µA

-15

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10 mA

-15

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100 µA

-5

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -100 mA IB = -1 mA

IC = -1 A

IB = -100 mA

IC = -2 A

IB = -200 mA

-0.25

-0.40

-0.15

-0.50

-0.85

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -1 A

IB = -100 mA

-0.90

-1.25

hFE

(1)

DC current gain

IC = -50 mA

VCE = -2 V

IC = -500 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -2 A

VCE = -2 V

200

130

280

560

CCBO

Collector-base

capacitance (IE = 0)

VCB = -10 V

f = 1 MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = -1.5 A

VCC = -10 V

IB1 = -IB2 = -150 mA

220

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