STPS1H100A datasheet(3/6 Pages) STMICROELECTRONICS

Nome de Peças	STPS1H100A

Descrição Electrónicos	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Ta=75°C

Ta=110°C

Ta=25°C

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum

values)

(SMB).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

tp(s)

Zth(j-a)/Rth(j-a)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 5: Relative variation of thermal impedance

junction to ambient versus pulse duration (SMB).

100

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

102030405060708090

100

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

2E+2

VR(V)

IR(µA)

Tj=125°C

Tj=25°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

1E-3

1E-2

1E-1

1E+0

δ=0.5

IM(A)

t(s)

Ta=110°C

Ta=75°C

Ta=25°C

Fig. 4: Non repetitive surge peak forward current

versus

overload duration (maximum values)

(SMA).

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

0.01

0.10

1.00

δ=0.1

δ=0.2

δ=0.5

Single pulse

Zth(j-a)/Rth(j-a)

tp(s)

δ=tp/T

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration (SMA).

STPS1H100A/U

3/6

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