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STP5N30 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STP5N30
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP5N30 Folha de dados(HTML) 1 Page - STMicroelectronics

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STP5N30
STP5N30FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 1.2
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
s
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STP5N30
STP5N30FI
300 V
300 V
<1. 4
Ω
<1. 4
Ω
5A
3.5 A
1
2
3
TO-220
ISOWATT220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP5N30
STP5N30FI
VDS
Drain-source Voltage (VGS =0)
300
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)300
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC5
3.5
A
ID
Drain Current (cont inuous) at T c =100
oC3.2
2.2
A
IDM(
•)
Drain Current (pulsed)
20
20
A
Ptot
Total Dissipation at Tc =25
oC75
35
W
Derating Factor
0.6
0.28
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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