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PM6670STR Folha de dados(PDF) 46 Page - STMicroelectronics

Nome de Peças PM6670STR
Descrição Electrónicos  Complete DDR2/3 memory power supply controller
PDF  53 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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PM6670STR Folha de dados(HTML) 46 Page - STMicroelectronics

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Application information
PM6670S
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8.1.6
VDDQ current limit setting
The valley current limit is set by RCSNS and must be chosen to support the maximum load
current. The valley of the inductor current ILvalley is:
Equation 45
The output current limit depends on the current ripple as shown in Figure 41:
Figure 41.
Valley current limit waveforms
As the valley threshold is fixed, the greater the current ripple, the greater the DC output
current will be. If an output current limit greater than ILOAD(max) over all the input voltage
range is required, the minimum current ripple must be considered in the previous formula.
Then the resistor RCSNS is:
Equation 46
where RDSon is the drain-source on-resistance of the low-side switch. Consider the
temperature effect and the worst case value in RDSon calculation (typically +0.4 %/°C).
The accuracy of the valley current also depends on the offset of the internal comparator
(±6 mV).
The negative valley-current limit (if the device works in forced-PWM mode) is given by:
Equation 47
2
I
(max)
I
I
L
LOAD
Lvalley
∆
−
=
Inductor current
Valley current limit
MAX LOAD 1
MAX LOAD 2
Current
Time
Inductor current
uA
100
I
R
R
Lvalley
DSon
CSNS
⋅
=
DSon
NEG
R
mV
110
I
=



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