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STP3N100 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STP3N100
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  10 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3N100 Folha de dados(HTML) 1 Page - STMicroelectronics

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STP3N100
STP3N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INPUT CAPACITANCE
s
LOW GATE CHARGE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
December 1996
TYPE
VDSS
R DS(on)
ID
STP3N100
STP3N100FI
1000 V
1000 V
<5
Ω
<5
Ω
3.5 A
2A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP3N100
STP3N100FI
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)
1000
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC3.5
2
A
ID
Drain Current (cont inuous) at T c =100
oC2
1.2
A
IDM(
•)
Drain Current (pulsed)
14
14
A
Ptot
Total Dissipation at Tc =25
oC
100
40
W
Derating Factor
0.8
0.32
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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