M48T35_0708 datasheet(20/29 Pages) STMICROELECTRONICS

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DC and AC parameters

M48T35 M48T35Y

20/29

Table 10.

Power down/up AC characteristics

Table 11.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for Ambient Operating Temperature: TA = 0 to 70 or –40 to 85°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where

noted).

Min

Max

Unit

tPD

E or W at VIH before Power Down

µs

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after

VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC Fall Time

M48T35

µs

M48T35Y

µs

VPFD (min) to VPFD (max) VCC Rise Time

µs

tRB

VSS to VPFD (min) VCC Rise Time

µs

trec

(4)(4)

trec (min) = 20ms for industrial temperature Grade 6 device.

VPFD (max) to Inputs Recognized

200

Symbol

Parameter(1)(2)

Valid for Ambient Operating Temperature: TA = 0 to 70 or –40 to 85°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where

noted).

All voltages referenced to VSS.

Min

Typ

Max

Unit

VPFD

Power-fail Deselect Voltage

M48T35

4.5

4.6

4.75

M48T35Y

4.2

4.35

4.5

VSO

Battery Back-up Switchover Voltage

M48T35

3.0

M48T35Y

3.0

tDR

(3)(5)

CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).

Expected Data Retention Time

Grade 1

10(4)

Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - Grade 6 device).

YEARS

Grade 6

10(5)

At 25°C, VCC = 0V.

YEARS

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