P12NB30FP datasheet(1/6 Pages) STMICROELECTRONICS

Nome de Peças	P12NB30FP

Descrição Electrónicos	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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STP12NB30

STP12NB30FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.34

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY(UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

January 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

ST P12NB30

ST P12NB30FP

VDS

Drain-source Volt age (VGS =0)

300

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

300

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C12

6.5

A

ID

Drain Current (continuous) at Tc =100

oC7.5

4

A

IDM(

•)

Drain Current (pulsed)

48

A

Ptot

Tot al Dissipation at Tc =25

oC125

35

W

Derating F act or

1

0. 28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

5.5

V/ ns

VISO

Insulat ion Withstand Volt age (DC)



2000

V

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

TYPE

VDSS

RDS(on)

ID

STP3NB60

STP12NB30F P

300 V

<0.40

Ω

<0.40

Ω

12A

6.5 A

1/6

Nº de peça semelhante - P12NB30FP

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VBsemi Electronics Co.,...	P12NB30	1Mb / 8P	N-Channel 650 V (D-S) MOSFET

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