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BTA12 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças BTA12
Descrição Electrónicos  12 A Snubberless, logic level and standard triacs
PDF  12 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTA12 Folha de dados(HTML) 5 Page - STMicroelectronics

  BTA12 Datasheet HTML 1Page - STMicroelectronics BTA12 Datasheet HTML 2Page - STMicroelectronics BTA12 Datasheet HTML 3Page - STMicroelectronics BTA12 Datasheet HTML 4Page - STMicroelectronics BTA12 Datasheet HTML 5Page - STMicroelectronics BTA12 Datasheet HTML 6Page - STMicroelectronics BTA12 Datasheet HTML 7Page - STMicroelectronics BTA12 Datasheet HTML 8Page - STMicroelectronics BTA12 Datasheet HTML 9Page - STMicroelectronics Next Button
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BTA12, BTB12, T12xx
Characteristics
5/12
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
Figure 8.
Figure 8: Relative variation of gate
trigger current, holding current and
latching current versus junction
temperature (typical values)
0.01
0.10
1.00
10.00
10
100
1000
I
(A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
ITSM
dI/dt limitation:
50A/µs
I t
2
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & IL
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(BW/CW/T1210/T1235)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values) (TW)
0.1
1.0
10.0
100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
T1210/SW
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T1235/T1250/CW/BW
C
B
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
10.0
100.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
Figure 11.
Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 12.
D2PAK thermal resistance junction
to ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0
4
8
1216
20
2428
32
3640
0
10
20
30
40
50
60
70
80
S(cm²)
R
(°C/W)
th(j-a)
DPAK
2



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