ACST4_07 datasheet(2/13 Pages) STMICROELECTRONICS

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Characteristics

ACST4

2/13

Characteristics

Table 1.

Absolute ratings (limiting values)

For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage

Symbol

Parameter

Value

Unit

VDRM/VRRM

Repetitive peak off-state voltage

Tj = -10° C

700

IT(RMS)

RMS on-state current full cycle sine

wave 50 to 60 Hz

DPAK, IPAK

Tc = 110° C

TO-220FPAB Tc = 100° C

ITSM

Non repetitive surge peak on-state current

F = 50 Hz

Tj initial = 25° C, full cycle sine wave

F = 60 Hz

I2t

Fusing capability

tp = 10 ms

6.4

A2s

dI/dt

Repetitive on-state current critical rate of

rise I

G = 10 mA (t

r < 100 ns)

Tj = 125° C

F = 120 Hz

μs

VPP

Non repetitive line peak pulse voltage(1)

2kV

Tstg

Storage temperature range

- 40 to + 150

° C

Operating junction temperature range

- 30 to + 125

° C

Maximum lead soldering temperature during 10 s

260

° C

according to test described by IEC 61000-4-5 standard and Figure 3.

Table 2.

Gate characteristics (maximum values)

Symbol

Parameter

Value

Unit

PG(AV)

Average gate power dissipation

0.1

PGM

Peak gate power dissipation (tp = 20 µs)

IGM

Peak gate current (tp = 20 µs)

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

S(1) = 0.5 cm2

DPAK, IPAK

° C/W

TO-220FPAB

° C/W

Rth (j-l)

Junction to tab/lead for full cycle sine wave

conduction

DPAK, IPAK

2.6

° C/W

TO-220FPAB

4.6

° C/W

S = Copper surface under Tab

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