STN4NE03 datasheet(1/8 Pages) STMICROELECTRONICS

Nome de Peças	STN4NE03

Descrição Electrónicos	N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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STN4NE03

N - CHANNEL 30V - 0.045

Ω - 4A - SOT-223

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.045

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique ”

Single Feature

Size

™ ” strip-based process. The resulting

transistor shows extremely high packing density

for

low

on-resistance,

rugged

avalanche

characteristics and less critical alignment steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL (DISK DRIVES, etc.)

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

s

POWER MANAGEMENT IN

BATTERY-OPERATED AND PORTABLE

EQUIPMENT

®

INTERNAL SCHEMATIC DIAGRAM

August 1998

1

2

3

SOT-223

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

30

V

VGS

Gate-source Voltage

± 20

V

ID(*)

Drain Current (cont inuous) at Tc =25

oC4

A

ID(*)

Drain Current (cont inuous) at Tc =100

oC2.5

A

IDM(

•)

Drain Current (pulsed)

16

A

Ptot

Tot al Dissipation at Tc =25

oC2.5

W

Derating Fact or

0. 02

W/

oC

dv/dt (1)

Peak Diode Recovery voltage slope

6

V/ ns

Tstg

St orage Temperature

-65 to 150

oC

Tj

Max. Operat ing Junction Temperat ure

150

oC

(

•) Pulse width limited by safe operating area

(*) Limited by package

(1)ISD

≤ 10A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TjMAX

TYPE

VDSS

RDS(on)

ID

ST N4NE03

30 V

< 0.06

Ω

4A

1/8

Nº de peça semelhante - STN4NE03

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STN4NE03L	91Kb / 8P	N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET Aug-1998

More results

Descrição semelhante - STN4NE03

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STN2NE06	84Kb / 8P	N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET Apr-1999
	STN2NE10L	85Kb / 8P	N-CHANNEL 100V - 0.33ohm - 2A SOT-223 STripFET POWER MOSFET Mar-2000
	STN2NF06	105Kb / 9P	N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET Jul-1998
	STN3NE06	94Kb / 8P	N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET Aug-1998
	STN3NF06	283Kb / 8P	N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET™ II POWER MOSFET Dec-2002
	STN3NF06L	286Kb / 8P	N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET™ II POWER MOSFET Dec-2002
	STN4NE03L	91Kb / 8P	N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET Aug-1998
	STN4NF03L	260Kb / 8P	N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET™ II POWER MOSFET Dec-2002
	STS4DNF60L	71Kb / 5P	N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET Dec-1998
	STN4NF03L	228Kb / 12P	N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET 09-Oct-2006

More results

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