STTH602CT datasheet(3/9 Pages) STMICROELECTRONICS

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STTH602C

Characteristics

3/9

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 3 A, dIF/dt = 200 A/µs,

VR = 160 V, Tj = 125 °C

45.5

tfr

Forward recovery time

IF = 3 A, dIF/dt = 200 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

VFP

Forward recovery voltage

IF = 3 A, dIF/dt = 200 A/µs,

Tj = 25 °C

3.7

Figure 1.

Peak current versus duty cycle

(per diode)

Figure 2.

Forward voltage drop versus

forward current (typical values per

diode)

100

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

M(A)

d=tp/T

δ=tp/T

P = 5 W

P = 3 W

P = 10 W

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

FM(A)

j=25°C

j=150°C

VFM(V)

Figure 3.

Forward voltage drop versus

forward current (maximum values

per diode)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration (T0-220AB)

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

FM(A)

j=25°C

j=150°C

VFM(V)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

Single pulse

TO-220AB

tp(s)

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